株式会社イオンテクノセンター Implantation Simulation

最終更新日：2020-03-10 17:08:41.0
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Simulation for ion species, depth and concentration.

Customer's request "How much energy and dose should be used to achieve the desired depth and concentration?" And "What depth distribution of dopant ions will be given at the specified energy and dose." , We can provide a simulation. (This service presupposes a request for ion implantation.)

関連リンク - https://iontc.co.jp/en/semiconductor_process/

基本情報Implantation Simulation

Ion implantation simulation
・ Single profile
Calculation implantation conditions from depth and concentration
・ Box profile
Calculation of multi-step implantation conditions

Other simulations
・ Diffusion after heat treatment
Profile calculation before and after heat treatment
・ Multi-layer structure calculation
Optimization of film thickness such as SiO2

However, the simulation does not guarantee the profile or concentration after implantation.

価格情報	****** Please feel free to contact us about fee of implantation service.
納期	お問い合わせください ※※ お気軽にお問い合わせください
用途／実績例	We support many universities, institutes and corporates for implantation projects.