株式会社イオンテクノセンター Film Deposition&Heat Treatment

最終更新日：2020-03-10 17:20:19.0
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Equipped with various film deposition, oxide layer, annealing

PBII is suitable for carbon film for pre-annealing of SiC, RTA is for annealing.

関連リンク - https://iontc.co.jp/en/semiconductor_process/

基本情報Film Deposition&Heat Treatment

Film formation
・ PBII (Plasma Based Ion Implantation)
Carbon deposition
・ Sputter
Possible to form electrode film

Heat treatment
・ RTA (Rapid thermal annealing)
Heat treatment up to 1800 degrees is possible by vertical high-frequency induction heating
・ Oxidation furnace
Oxidation, heat treatment

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